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2SA1587_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Audio Frequency General Purpose Amplifier Applications
2SA1587
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1587
Audio Frequency General Purpose Amplifier Applications
• High voltage: VCEO = −120 V
• Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)
= 0.95 (typ.)
• High hFE: hFE = 200~700
• Low noise: NF = 1dB (typ.), 10dB (max)
• Complementary to 2SC4117
• Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
−120
V
VCEO
−120
V
VEBO
−5
V
IC
−100
mA
IB
−20
mA
PC
100
mW
Tj
125
°C
Tstg
−55~125
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
SC-70
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2E1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.006 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
ICBO
VCB = −120 V, IE = 0
IEBO
VEB = −5 V, IC = 0
hFE
(Note)
VCE = −6 V, IC = −2 mA
VCE (sat) IC = −10 mA, IB = −1 mA
fT
VCE = −6 V, IC = −1 mA
Cob
VCB = −10 V, IE = 0, f = 1 MHz
NF
VCE = −6 V, IC = −0.1 mA, f = 1 kHz,
Rg = 10 kΩ
Note: hFE classification GR (G): 200~400, BL (L): 350~700
( ) marking symbol
Marking
Min Typ. Max Unit
⎯
⎯ −0.1 μA
⎯
⎯ −0.1 μA
200
⎯
700
⎯
⎯
−0.3
V
⎯ 100 ⎯ MHz
⎯
4
⎯
pF
⎯
1.0
10
dB
1
2007-11-01