2SA1451A_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Speed, High-Current Switching Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1451A
2SA1451A
High-Speed, High-Current Switching Applications
Unit: mm
• Low collector saturation voltage
: V_{CE (sat)} = −0.4 V (max) (I_C = −6 A)
• High-speed switching: t_stg = 1.0 μs (typ.)
• Complementary to 2SC3709A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−60
V
Collector-emitter voltage
V_CEO
−50
V
Emitter-base voltage
V_EBO
−6
V
Collector current
I_C
−12
A
Base current
I_B
−2
A
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
P_C
30
W
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 1.7 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09