2SA1432_09 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1432
High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
2SA1432
Unit: mm
• High voltage: V_CBO = −300 V, V_CEO = −300 V
• Low saturation voltage: V_{CE (sat)} = −0.5 V (max)
• Small collector output capacitance: C_ob = 6 pF (typ.)
• Complementary to 2SC3672
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
−300
V
−300
V
−8
V
−100
mA
−20
mA
1000
mW
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-12-21