2SA1426_09 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Audio Power Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1426
Audio Power Amplifier Applications
2SA1426
Unit: mm
• High h_FE: h_FE = 100 to 320
• 1-W output applications
• Complementary to 2SC3666.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
−35
V
V_CEO
−30
V
V_EBO
−5
V
I_C
−800
mA
I_B
−160
mA
P_C
1000
mW
T_j
150
°C
JEDEC
―
T_stg
−55 to 150
°C
JEITA
―
Note1: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-7D101A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.2 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-12-21