2SA1384_07 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications

TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
2SA1384
2SA1384
High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
Unit: mm
• High voltage: V_CBO = −300 V, V_CEO = −300 V
• Low saturation voltage: V_{CE (sat)} = −0.5 V (max)
• Small collector output capacitance: C_ob = 6 pF (typ.)
• Complementary to 2SC3515
• Small flat package
• P_C = 1.0 to 2.0 W (mounted on a ceramic substrate)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
V_CBO
−300
V
V_CEO
−300
V
V_EBO
−8
V
I_C
−100
mA
I_B
−20
mA
P_C
500
P_C
mW
1000
(Note 1)
PW-MINI
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
Note 1: 2SA1384 mounted on a ceramic substrate (250 mm² × 0.8 t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-09