2SA1382_09 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Power Amplifier Applications High-Speed Switching Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1382
Power Amplifier Applications
High-Speed Switching Applications
2SA1382
Unit: mm
• High DC current gain: h_FE = 150 to 400 (I_C = −0.5 A)
• Low collector saturation voltage: V_{CE (sat)} = −0.5 V (max) (I_C = −1 A)
• High-speed switching: t_stg = 1.0 μs (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−50
V
Collector-emitter voltage
V_CEO
−50
V
Emitter-base voltage
V_EBO
−7
V
Collector current
DC
Peak
I_C
−2
A
I_CP
−4
Base current
I_B
−1
A
JEDEC
TO-92MOD
Collector power dissipation
P_C
900
mW
JEITA
―
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-12-21