2SA1362_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Low Frequency Power Amplifier Applications Power Switching Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1362
Low Frequency Power Amplifier Applications
Power Switching Applications
2SA1362
Unit: mm
• High DC current gain: h_FE = 120~400
• Low saturation voltage: V_{CE (sat)} = −0.2 V (max)
(I_C = −400 mA, I_B = −8 mA)
• Suitable for driver stage of small motor
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
−15
V
−15
V
−5
V
−800
mA
−160
mA
200
mW
150
°C
−55~150
°C
JEDEC
JEITA
TOSHIBA
TO-236MOD
SC-59
2-3F1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.012 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1
2007-11-01