2SA1362-GR Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Low Frequency Power Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1362
Low Frequency Power Amplifier Applications
Power Switching Applications
2SA1362
Unit: mm
• High DC current gain: h_FE = 120~400
• Low saturation voltage: V_{CE (sat)} = −0.2 V (max)
(I_C = −400 mA, I_B = −8 mA)
• Suitable for driver stage of small motor
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−15
V
Collector-emitter voltage
V_CEO
−15
V
Emitter-base voltage
V_EBO
−5
V
Collector current
Base current
I_C
−800
mA
I_B
−160
mA
JEDEC
TO-236MOD
Collector power dissipation
P_C
200
mW
JEITA
SC-59
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55~150
°C
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1
2007-11-01