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2SA1360_10 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Audio Frequency Amplifier Applications | |||
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1360
Audio Frequency Amplifier Applications
2SA1360
Unit: mm
⢠Complementary to 2SC3423
⢠Small collector output capacitance: Cob = 2.5 pF (typ.)
⢠High transition frequency: fT = 200 MHz (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
â150
V
Collector-emitter voltage
VCEO
â150
V
Emitter-base voltage
VEBO
â5
V
Collector current
IC
â50
mA
Base current
IB
â5
mA
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
1.2
W
5
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
â55 to 150
°C
JEDEC
JEITA
TOSHIBA
â
â
2-8H1A
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.82 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-03-10
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