2SA1360O Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1360
Audio Frequency Amplifier Applications
2SA1360
Unit: mm
• Complementary to 2SC3423
• Small collector output capacitance: C_ob = 2.5 pF (typ.)
• High transition frequency: f_T = 200 MHz (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−150
V
Collector-emitter voltage
V_CEO
−150
V
Emitter-base voltage
V_EBO
−5
V
Collector current
I_C
−50
mA
Base current
I_B
−5
mA
Collector power
dissipation
Ta = 25°C
Tc = 25°C
P_C
1.2
W
5
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-8H1A
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.82 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-03-10