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2SA1359_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Audio Frequency Power Amplifier Low-Speed Switching | |||
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1359
Audio Frequency Power Amplifier
Low-Speed Switching
2SA1359
Unit: mm
⢠Suitable for the output stage of 5-watt car radios and car stereos.
⢠Good hFE linearity
⢠Complementary to 2SC3422.
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
â40
V
â40
V
â5
V
â3
A
â1
A
1.5
W
10
150
°C
â55 to 150
°C
JEDEC
JEITA
TOSHIBA
â
â
2-8H1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.82 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09
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