2SA1356_06 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Audio Power Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1356
Audio Power Amplifier Applications
2SA1356
Unit: mm
• Low saturation voltage: V_CE (sat) = −0.32 V (typ.)
(I_C = −500 mA, I_B = −50 mA)
• High collector power dissipation: P_C = 1.2 W (Ta = 25°C)
• Complementary to 2SC3419
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−40
V
Collector-emitter voltage
V_CEO
−40
V
Emitter-base voltage
V_EBO
−5
V
Collector current
I_C
−800
mA
Base current
I_B
−80
mA
Collector power
dissipation
Ta = 25°C
Tc = 25°C
P_C
1.2
W
5
JEDEC
―
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
JEITA
TOSHIBA
―
2-8H1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.82 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09