2SA1327A_06 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Strobe Flash Applications Audio Power Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1327A
2SA1327A
Strobe Flash Applications
Audio Power Amplifier Applications
Unit: mm
• High DC current gain: h_FE = 70 (min) (V_CE = −2 V, I_C = −1 A)
• Low collector saturation voltage: V_{CE (sat)} = −0.5 V (max)
(I_C = −8 A, I_B = −0.4 A)
• High collector power dissipation: P_C = 20 W (Tc = 25°C)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
−50
V
−20
V
−8
V
−10
A
−20
−2
A
2.0
W
20
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
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2006-11-09