2SA1314_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Strobe Flash Applications Audio Power Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1314
Strobe Flash Applications
Audio Power Applications
2SA1314
Unit: mm
• High DC current gain and excellent linearity
: h_{FE (1)} = 140 to 600 (V_CE = −1 V, I_C = −0.5 A)
: h_{FE (2)} = 60 (min), 120 (typ.), (V_CE = －1 V, I_C = −4 A)
• Low saturation voltage
: V_{CE (sat)} = −0.5 V (max) (I_C = −2 A, I_B = −50 mA)
• Small package
• Complementary to 2SC2982
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−20
V
Collector-emitter voltage
V_CEO
−10
V
Emitter-base voltage
V_EBO
−6
V
DC
I_C
−2
Collector current Pulsed
I_CP
(Note 1)
A
−4
Base current
I_B
−2
A
Collector power dissipation
P_C
500
P_C
mW
1000
(Note 2)
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55 to 150
°C
PW-MINI
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Pulse test: pulse width = 10 mS (max), duty cycle = 30% (max)
Note 2: Mounted on a ceramic substrate (250 mm² × 0.8 t)
Note 3:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-09