2SA1313_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1313
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
2SA1313
Unit: mm
• Excellent h_FE linearity: h_{FE (2)} = 25 (min)
at V_CE = −6 V, I_C = −400 mA
• High voltage: V_CEO = −50 V (min)
• Complementary to 2SC3325
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
−50
V
−50
V
−5
V
−500
mA
−50
mA
200
mW
150
°C
−55~150
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1
2007-11-01