2SA1313-Y Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Audio Frequency Low Power Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1313
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
2SA1313
Unit: mm
• Excellent h_FE linearity: h_{FE (2)} = 25 (min)
at V_CE = −6 V, I_C = −400 mA
• High voltage: V_CEO = −50 V (min)
• Complementary to 2SC3325
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
−50
V
−50
V
−5
V
−500
mA
−50
mA
200
mW
150
°C
−55~150
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1
2007-11-01