2SA1312-GR Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Audio Frequency Low Noise Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1312
2SA1312
Audio Frequency Low Noise Amplifier Applications
Unit: mm
• High voltage: V_CEO = −120 V
• Excellent h_FE linearity: h_FE (I_C = −0.1 mA)/ h_FE (I_C = −2 mA)
h= 0.95 (typ.)
• High h_FE: h_FE = 200~700
• Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz
• Complementary to 2SC3324
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
−120
V
−120
V
−5
V
−100
mA
−20
mA
150
mW
125
°C
−55~125
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1
2007-11-01