2SA1300_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Strobe Flash Applications Medium Power Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1300
2SA1300
Strobe Flash Applications
Medium Power Amplifier Applications
Unit: mm
• High DC current gain and excellent h_FE linearity
: h_{FE (1)} = 140~600 (V_CE = −1 V, I_C = −0.5 A)
: h_{FE (2)} = 60 (min), 120 (typ.) (V_CE = −1 V, I_C = −4 A)
• Low saturation voltage: V_{CE (sat)} = −0.5 V (max)
(I_C = −2 A, I_B = −50 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−20
V
Collector-emitter voltage
V_CES
−20
V
V_CEO
−10
Emitter-base voltage
V_EBO
−6
V
Collector current
DC
I_C
Pulsed
I_CP
(Note 1)
−2
A
−5
Base current
I_B
−0.2
A
JEDEC
TO-92
Collector power dissipation
P_C
750
mW
JEITA
SC-43
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55~150
°C
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
I_CBO
V_CB = −20 V, I_E = 0
I_EBO
V_EB = −6 V, I_C = 0
V _{(BR) CEO} I_C = −10 mA, I_B = 0
V _{(BR) EBO} I_E = −1 mA, I_C = 0
h_{FE (1)}
(Note 2)
V_CE = −1 V, I_C = −0.5 A
h_{FE (2)}
V_{CE (sat)}
V_BE
f_T
C_ob
V_CE = −1 V, I_C = −4 A
I_C = −2 A, I_B = −50 mA
V_CE = −1 V, I_C = −2 A
V_CE = −1 V, I_C = −0.5 A
V_CB = −10 V, I_E = 0, f = 1 MHz
Min Typ. Max Unit
⎯
⎯ −0.1 μA
⎯
⎯ −0.1 μA
−10 ⎯
⎯
V
−6
⎯
⎯
V
140
⎯
600
60 120 ⎯
⎯
−0.2 −0.5
V
⎯ −0.83 −1.5
V
⎯ 140 ⎯ MHz
⎯
50
⎯
pF
Note 2: h_{FE (1)} classification Y: 140~280, GR: 200~400, BL: 300~600
1
2007-11-01