2SA1298_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Low Frequency Power Amplifier Application Power Switching Applications

TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)
2SA1298
Low Frequency Power Amplifier Application
Power Switching Applications
2SA1298
Unit: mm
• High DC current gain: h_FE = 100~320
• Low saturation voltage: V_{CE (sat)} = −0.4 V (max)
(I_C = −500 mA, I_B = −20 mA)
• Suitable for driver stage of small motor
• Complementary to 2SC3265
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
−30
V
−25
V
−5
V
−800
mA
−160
mA
200
mW
150
°C
−55~150
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1
2007-11-01