2SA1297_10 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Power Amplifier Applications Power Switching Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1297
Power Amplifier Applications
Power Switching Applications
2SA1297
Unit: mm
• Low saturation voltage: V_{CE (sat)} = −0.5 V (max) @I_C = −2 A
• Complementary to 2SC3267.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−20
V
Collector-emitter voltage
V_CEO
−20
V
Emitter-base voltage
V_EBO
−6
V
Collector current
I_C
−2
A
Base current
I_B
−0.5
A
Collector power dissipation
Junction temperature
Storage temperature range
P_C
400
mW
MINI
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
―
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-4E1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
Weight: 0.13 g (typ.)
temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
V_CB = −20 V, I_E = 0
I_EBO
V _{(BR) CEO}
V_EB = −6 V, I_C = 0
I_C = −10 mA, I_B = 0
V _{(BR) EBO} I_E = −0.1 mA, I_C = 0
h_{FE (1)}
(Note)
V_CE = −2 V, I_C = −0.1 A
h_{FE (2)} V_CE = −2 V, I_C = −2 A
V_{CE (sat)} I_C = −2 A, I_B = −0.1 A
V_BE
V_CE = −2 V, I_C = −0.1 A
f_T
V_CE = −2 V, I_C = −0.5 A
C_ob
V_CB = −10 V, I_E = 0, f = 1 MHz
Note: h_{FE (1)} Y: 120 to 240, GR: 200 to 400
Min Typ. Max Unit
⎯
⎯ −0.1 μA
⎯
⎯ −0.1 μA
−20 ⎯
⎯
V
−6
⎯
⎯
V
120
⎯
400
40
⎯
⎯
⎯
⎯
−0.5
V
⎯
⎯ −0.85 V
⎯ 120 ⎯ MHz
⎯
40
⎯
pF
1
2010-03-15