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2SA1297_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Power Amplifier Applications Power Switching Applications | |||
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1297
Power Amplifier Applications
Power Switching Applications
2SA1297
Unit: mm
⢠Low saturation voltage: VCE (sat) = â0.5 V (max) @IC = â2 A
⢠Complementary to 2SC3267.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
â20
V
VCEO
â20
V
VEBO
6
V
IC
â2
A
IB
â0.5
A
PC
400
mW
Tj
150
°C
Tstg
â55~150
°C
JEDEC
â
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
â
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-4E1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.13 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = â20 V, IE = 0
IEBO
VEB = â6 V, IC = 0
V (BR) CEO IC = â10 mA, IB = 0
V (BR) EBO IE = â0.1 mA, IC = 0
hFE (1)
VCE = â2 V, IC = â0.1 A
(Note)
hFE (2) VCE = â2 V, IC = â2 A
VCE (sat) IC = â2 A, IB = â0.1 A
VBE
VCE = â2 V, IC = â0.1 A
fT
VCE = â2 V, IC = â0.5 A
Cob
VCB = â10 V, IE = 0, f = 1 MHz
Note: hFE (1) Y: 120~240, GR: 200~400
Min Typ. Max Unit
â¯
⯠â0.1 μA
â¯
⯠â0.1 μA
â20 â¯
â¯
V
â6
â¯
â¯
V
120
â¯
400
40
â¯
â¯
â¯
â¯
â0.5
V
â¯
⯠â0.85 V
⯠120 ⯠MHz
â¯
40
â¯
pF
1
2007-11-01
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