2SA1255_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Voltage Switching Applications

TOSHIBA Transistor Silicon PNP Triple Diffused (PCT process)
2SA1255
2SA1255
High Voltage Switching Applications
Unit: mm
• High voltage: V_CBO = −200 V (min)
V_CEO = −200 V (min)
• Small package
• Complementary to 2SC3138
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−200
V
Collector-emitter voltage
V_CEO
−200
V
Emitter-base voltage
V_EBO
−5
V
Collector current
I_C
−50
mA
Base current
I_B
−20
mA
Collector power dissipation
P_C
150
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55~125
°C
JEDEC
TO-236MOD
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
SC-59
temperature/current/voltage and the significant change in
TOSHIBA
2-3F1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.012 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1
2007-11-01