2SA1242_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Strobe Flash Applications Medium Power Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1242
Strobe Flash Applications
Medium Power Amplifier Applications
2SA1242
Unit: mm
• Excellent h_FE linearity
: h_{FE (1)} = 100 to 320 (V_CE = −2 V, I_C = −0.5 A)
: h_{FE (2)} = 70 (min) (V_CE = −2 V, I_C = −4 A)
• Low collector saturation voltage
: V_{CE (sat)} = −1.0 V (max) (I_C = −4 A, I_B = −0.1 A)
• High power dissipation
: P_C = 10 W (Tc = 25°C), P_C = 1.0 W (Ta = 25°C)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
(Note 1)
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
−35
V
−20
V
−8
V
−5
A
−8
−0.5
A
1.0
W
10
150
°C
−55 to 150
°C
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
1
2006-11-09