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2SA1241_09 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Power Amplifier Applications Power Switching Applications
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1241
Power Amplifier Applications
Power Switching Applications
2SA1241
Unit: mm
• Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)
• Excellent switching time: tstg = 1.0 μs (typ.)
• Complementary to 2SC3076
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
−50
V
−50
V
−5
V
−2
A
−1
A
1.0
W
10
150
°C
−55 to 150
°C
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
1
2009-12-21