2SA1225_10 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Power Amplifier Applications Driver Stage Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1225
Power Amplifier Applications
Driver Stage Amplifier Applications
2SA1225
Unit: mm
• High transition frequency: f_T = 100 MHz (typ.)
• Complementary to 2SC2983
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−160
V
Collector-emitter voltage
V_CEO
−160
V
Emitter-base voltage
V_EBO
−5
V
Collector current
I_C
−1.5
A
Base current
I_B
−0.3
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
P_C
1.0
W
15
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-7J1A
reliability significantly even if the operating conditions (i.e.
Weight: 0.36 g (typ.)
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
1
2010-02-05