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2SA1225_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Power Amplifier Applications Driver Stage Amplifier Applications | |||
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1225
Power Amplifier Applications
Driver Stage Amplifier Applications
2SA1225
Unit: mm
⢠High transition frequency: fT = 100 MHz (typ.)
⢠Complementary to 2SC2983
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
â160
V
â160
V
â5
V
â1.5
A
â0.3
A
1.0
W
15
150
°C
â55 to 150
°C
JEDEC
â
JEITA
â
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
â
JEITA
â
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
1
2005-02-01
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