2SA1213_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Power Amplifier Applications Power Switching Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1213
Power Amplifier Applications
Power Switching Applications
2SA1213
Unit: mm
• Low saturation voltage: V_{CE (sat)} = −0.5 V (max) (I_C = −1 A)
• High speed switching time: t_stg = 1.0 μs (typ.)
• Small flat package
• P_C = 1.0 to 2.0 W (mounted on a ceramic substrate)
• Complementary to 2SC2873
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
−50
V
V_CEO
−50
V
V_EBO
−5
V
I_C
−2
A
I_B
−0.4
A
P_C
500
P_C
mW
1000
(Note 1)
T_j
150
°C
T_stg
−55 to 150
°C
PW-MINI
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm² × 0.8 t)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-09