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2SA1213Y Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Power Amplifier Applications | |||
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1213
Power Amplifier Applications
Power Switching Applications
2SA1213
Unit: mm
⢠Low saturation voltage: VCE (sat) = â0.5 V (max) (IC = â1 A)
⢠High speed switching time: tstg = 1.0 μs (typ.)
⢠Small flat package
⢠PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
⢠Complementary to 2SC2873
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
â50
V
VCEO
â50
V
VEBO
â5
V
IC
â2
A
IB
â0.4
A
PC
500
PC
mW
1000
(Note 1)
Tj
150
°C
Tstg
â55 to 150
°C
PW-MINI
JEDEC
â
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm2 Ã 0.8 t)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-12-21
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