2SA1203_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Audio Frequency Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1203
2SA1203
Audio Frequency Amplifier Applications
Unit: mm
• Suitable for output stage of 3 watts amplifier
• Small flat package
• P_C = 1.0 to 2.0 W (mounted on a ceramic substrate)
• Complementary to 2SC2883
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−30
V
Collector-emitter voltage
V_CEO
−30
V
Emitter-base voltage
V_EBO
−5
V
Collector current
I_C
−1.5
A
Base current
I_B
−0.3
A
P_C
500
Collector power dissipation
P_C
mW
1000
PW-MINI
(Note 1)
JEDEC
―
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
Note 1: Mounted on a ceramic substrate (250 mm² × 0.8 t)
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 2:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-09