2SA1201_09 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Voltage Amplifier Applications Power Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1201
Voltage Amplifier Applications
Power Amplifier Applications
2SA1201
Unit: mm
• High voltage: V_CEO = −120 V
• High transition frequency: f_T = 120 MHz (typ.)
• Small flat package
• P_C = 1 to 2 W (mounted on a ceramic substrate)
• Complementary to 2SC2881
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
−120
V
V_CEO
−120
V
V_EBO
−5
V
I_C
−800
mA
I_B
−160
mA
P_C
500
P_C
mW
1000
(Note 1)
T_j
150
°C
T_stg
−55 to 150
°C
PW-MINI
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm² × 0.8 t)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-12-21