2SA1182_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications

TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)
2SA1182
2SA1182
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
Unit: mm
• Excellent h_FE linearity: h_{FE (2)} = 25 (min)
at V_CE = −6 V, I_C = −400 mA
• Complementary to 2SC2859.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
−35
V
−30
V
−5
V
−500
mA
−50
mA
150
mW
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
TO-236MOD
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
SC-59
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-3F1A
absolute maximum ratings.
Weight: 0.012 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
(Note)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
I_CBO
I_EBO
h_{FE (1)}
h_{FE (2)}
V_{CE (sat)}
V_BE
f_T
C_ob
Test Condition
V_CB = −35 V, I_E = 0
V_EB = −5 V, I_C = 0
V_CE = −1 V, I_C = −100 mA
V_CE = −6 V, I_C = −400 mA
I_C = −100 mA, I_B = −10 mA
V_CE = −1 V, I_C = −100 mA
V_CE = −6 V, I_C = −20 mA
V_CB = −6 V, I_E = 0, f = 1 MHz
Min Typ. Max Unit
⎯
⎯ −0.1 μA
⎯
⎯ −0.1 μA
70
⎯
240
25
⎯
⎯
⎯ −0.1 −0.25 V
⎯
−0.8 −1.0
V
⎯ 200 ⎯ MHz
⎯
13
⎯
pF
Note: h_{FE (1)} classification O(O): 70~140, Y(Y): 120~240, GR(G): 200~400 ( ) Marking Symbol
h_{FE (2)} classification O: 25 (min), Y: 40 (min), GR: 70 (min)
Marking
1
2007-11-01