2SA1182-Y Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications

TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)
2SA1182
2SA1182
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
Unit: mm
• Excellent h_FE linearity: h_{FE (2)} = 25 (min)
at V_CE = −6 V, I_C = −400 mA
• Complementary to 2SC2859.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−35
V
Collector-emitter voltage
V_CEO
−30
V
Emitter-base voltage
V_EBO
−5
V
Collector current
I_C
−500
mA
Base current
I_B
−50
mA
Collector power dissipation
P_C
150
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55~125
°C
JEDEC
TO-236MOD
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
SC-59
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-3F1A
operating temperature/current/voltage, etc.) are within the
Weight: 0.012 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
(Note)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
I_CBO
I_EBO
h_{FE (1)}
h_{FE (2)}
V_{CE (sat)}
V_BE
f_T
C_ob
Test Condition
V_CB = −35 V, I_E = 0
V_EB = −5 V, I_C = 0
V_CE = −1 V, I_C = −100 mA
V_CE = −6 V, I_C = −400 mA
I_C = −100 mA, I_B = −10 mA
V_CE = −1 V, I_C = −100 mA
V_CE = −6 V, I_C = −20 mA
V_CB = −6 V, I_E = 0, f = 1 MHz
Min Typ. Max Unit
⎯
⎯ −0.1 μA
⎯
⎯ −0.1 μA
70
⎯
240
25
⎯
⎯
⎯ −0.1 −0.25 V
⎯
−0.8 −1.0
V
⎯ 200 ⎯ MHz
⎯
13
⎯
pF
Note: h_{FE (1)} classification O(O): 70~140, Y(Y): 120~240, GR(G): 200~400 ( ) Marking Symbol
h_{FE (2)} classification O: 25 (min), Y: 40 (min), GR: 70 (min)
Marking
1
2007-11-01