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2SA1163_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Audio Frequency General Purpose Amplifier Applications | |||
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2SA1163
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1163
Audio Frequency General Purpose Amplifier Applications
⢠High voltage: VCEO = â120 V
⢠Excellent hFE linearity: hFE (IC = â0.1 mA)/hFE (IC = â2 mA)
= 0.95 (typ.)
⢠High hFE: hFE = 200~700
⢠Low noise: NF = 1dB (typ.), 10dB (max)
⢠Complementary to 2SC2713
⢠Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
â120
V
Collector-emitter voltage
VCEO
â120
V
Emitter-base voltage
VEBO
â5
V
Collector current
IC
â100
mA
Base current
IB
â20
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
â55~125
°C
JEDEC
TO-236MOD
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
SC-59
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-3F1A
operating temperature/current/voltage, etc.) are within the
Weight: 0.012 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Test Condition
ICBO
VCB = â120 V, IE = 0
IEBO
VEB = â5 V, IC = 0
hFE
(Note)
VCE = â6 V, IC = â2 mA
VCE (sat) IC = â10 mA, IB = â1 mA
fT
VCE = â6 V, IC = â1 mA
Cob
VCB = â10 V, IE = 0, f = 1 MHz
NF
VCE = â6 V, IC = â0.1 mA, f = 1 kHz,
Rg = 10 kΩ,
Note: hFE classification GR (G): 200~400, BL (L): 350~700
( ) marking symbol
Min Typ. Max Unit
â¯
⯠â0.1 μA
â¯
⯠â0.1 μA
200
â¯
700
â¯
â¯
â0.3
V
⯠100 ⯠MHz
â¯
4
â¯
pF
â¯
1.0
10
dB
Marking
1
2007-11-01
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