2SA1162_03 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Audio Frequency General Purpose Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1162
2SA1162
Audio Frequency General Purpose Amplifier Applications
Unit: mm
· High voltage and high current: VCEO = −50 V, IC = −150 mA (max)
· Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)
= 0.95 (typ.)
· High hFE: hFE = 70~400
· Low noise: NF = 1dB (typ.), 10dB (max)
· Complementary to 2SC2712
· Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
-50
V
-50
V
-5
V
-150
mA
-30
mA
150
mW
125
°C
-55~125
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
I_CBO
I_EBO
V_CB = -50 V, I_E = 0
V_EB = -5 V, I_C = 0
h_FE
V_CE = -6 V, I_C = -2 mA
(Note)
V_{CE (sat)}
f_T
C_ob
NF
I_C = -100 mA, I_B = -10 mA
V_CE = -10 V, I_C = -1 mA
V_CB = -10 V, I_E = 0, f = 1 MHz
V_CE = -6 V, I_C = -0.1 mA, f = 1 kHz,
Rg = 10 kW,
¾
¾ -0.1 mA
¾
¾ -0.1 mA
70
¾ 400
¾ -0.1 -0.3
V
80
¾
¾ MHz
¾
4
7
pF
¾
1.0
10
dB
Note: h_FE classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, ( ) marking symbol
Marking
1
2003-03-27