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2SA1162S-Y-LF Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) | |||
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2SA1162
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1162
Audio Frequency General Purpose Amplifier Applications
⢠High voltage and high current: VCEO = â50 V, IC = â150 mA (max)
⢠Excellent hFE linearity: hFE (IC = â0.1 mA)/hFE (IC = â2 mA)
= 0.95 (typ.)
⢠High hFE: hFE = 70~400
⢠Low noise: NF = 1dB (typ.), 10dB (max)
⢠Complementary to 2SC2712
⢠Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
â50
V
Collector-emitter voltage
VCEO
â50
V
Emitter-base voltage
VEBO
â5
V
Collector current
IC
â150
mA
Base current
IB
â30
mA
Collector power dissipation
PC
150
mW
Junction temperature
Storage temperature range
Tj
125
°C
Tstg
â55~125
°C
JEDEC
JEITA
TO-236MOD
SC-59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-3F1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.012 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Test Condition
ICBO
IEBO
VCB = â50 V, IE = 0
VEB = â5 V, IC = 0
hFE
(Note)
VCE = â6 V, IC = â2 mA
VCE (sat) IC = â100 mA, IB = â10 mA
fT
VCE = â10 V, IC = â1 mA
Cob
VCB = â10 V, IE = 0, f = 1 MHz
NF
VCE = â6 V, IC = â0.1 mA, f = 1 kHz,
Rg = 10 kΩ,
Min Typ. Max Unit
â¯
⯠â0.1 μA
â¯
⯠â0.1 μA
70
â¯
400
â¯
â0.1 â0.3
V
80
â¯
⯠MHz
â¯
4
7
pF
â¯
1.0
10
dB
Note: hFE classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, ( ) marking symbol
Marking
1
2007-11-01
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