2SA1162-GR Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1162
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1162
Audio Frequency General Purpose Amplifier Applications
• High voltage and high current: V_CEO = −50 V, I_C = −150 mA (max)
• Excellent h_FE linearity: h_FE (I_C = −0.1 mA)/h_FE (I_C = −2 mA)
= 0.95 (typ.)
• High h_FE: h_FE = 70~400
• Low noise: NF = 1dB (typ.), 10dB (max)
• Complementary to 2SC2712
• Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−50
V
Collector-emitter voltage
V_CEO
−50
V
Emitter-base voltage
V_EBO
−5
V
Collector current
I_C
−150
mA
Base current
I_B
−30
mA
Collector power dissipation
P_C
150
mW
Junction temperature
Storage temperature range
T_j
125
°C
T_stg
−55~125
°C
JEDEC
JEITA
TO-236MOD
SC-59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-3F1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.012 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Test Condition
I_CBO
I_EBO
V_CB = −50 V, I_E = 0
V_EB = −5 V, I_C = 0
h_FE
(Note)
V_CE = −6 V, I_C = −2 mA
V_{CE (sat)} I_C = −100 mA, I_B = −10 mA
f_T
V_CE = −10 V, I_C = −1 mA
C_ob
V_CB = −10 V, I_E = 0, f = 1 MHz
NF
V_CE = −6 V, I_C = −0.1 mA, f = 1 kHz,
Rg = 10 kΩ,
Min Typ. Max Unit
⎯
⎯ −0.1 μA
⎯
⎯ −0.1 μA
70
⎯
400
⎯
−0.1 −0.3
V
80
⎯
⎯ MHz
⎯
4
7
pF
⎯
1.0
10
dB
Note: h_FE classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, ( ) marking symbol
Marking
1
2007-11-01