|
2SA1160_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Strobe Flash Applications Medium Power Amplifier Applications | |||
|
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1160
Strobe Flash Applications
Medium Power Amplifier Applications
2SA1160
Unit: mm
⢠High DC current gain and excellent hFE linearity
: hFE (1) = 140 to 600 (VCE = â1 V, IC = â0.5 A)
: hFE (2) = 60 (min), 120 (typ.) (VCE = â1 V, IC = â4 A)
⢠Low saturation voltage
: VCE (sat) = â0.5 V (max) (IC = â2 A, IB = â50 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed (Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
â20
V
â10
V
â6
V
â2
A
â4
â2
A
900
mW
150
°C
â55 to 150
°C
JEDEC
TO-92MOD
JEITA
â
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-09
|
▷ |