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2SA1150_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Low Frequency Amplifier Applications | |||
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1150
2SA1150
Low Frequency Amplifier Applications
Unit: mm
⢠High hFE: hFE = 100~320
⢠Complementary to 2SC2710.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
â35
V
â30
V
â5
V
â800
mA
â160
mA
300
mW
150
°C
â55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
â
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
â
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-4E1A
absolute maximum ratings.
Weight: 0.13 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (âHandling Precautionsâ/âDerating Concept and Methodsâ) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = â30 V, IE = 0
IEBO
VEB = â5 V, IC = 0
V (BR) CEO IC = â10 mA, IB = 0
hFE (1)
VCE = â1 V, IC = â100 mA
(Note)
hFE (2) VCE = â1 V, IC = â700 mA
VCE (sat) IC = â500 mA, IB = â20 mA
VBE
VCE = â1 V, IC = â10 mA
fT
VCE = â5 V, IC = â10 mA
Cob
VCB = â10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 100~200, Y: 160~320
Min Typ. Max Unit
â¯
⯠â0.1 μA
â¯
⯠â0.1 μA
â30 â¯
â¯
V
100
â¯
320
35
â¯
â¯
â¯
â¯
â0.7
V
â0.5
â¯
â0.8
V
⯠120 ⯠MHz
â¯
19
â¯
pF
1
2007-11-01
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