2SA1091_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications

TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
2SA1091
2SA1091
High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
Unit: mm
• High voltage: V_CBO = −300 V, V_CEO = −300 V
• Low saturation voltage: V_{CE (sat)} = −0.5 V (max)
• Small collector output capacitance: C_ob = 6 pF (typ.)
• Complementary to 2SC2551.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
−300
V
−300
V
−8
V
−100
mA
−20
mA
400
mW
150
°C
−55~150
°C
JEDEC
JEITA
TOSHIBA
TO-92
SC-43
2-5F1B
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.21 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
V_CB = −300 V, I_E = 0
I_EBO
V_EB = −8 V, I_C = 0
V _{(BR) CBO} I_C = −0.1 mA, I_E = 0
V _{(BR) CEO} I_C = −1 mA, I_B = 0
h_{FE (1)}
V_CE = −10 V, I_C = −20 mA
(Note)
h_{FE (2)} V_CE = −10 V, I_C = −1 mA
V_{CE (sat)} I_C = −20 mA, I_B = −2 mA
V_{BE (sat)} I_C = −20 mA, I_B = −2 mA
f_T
V_CE = −10 V, I_C = −20 mA
C_ob
V_CB = −20 V, I_E = 0, f = 1 MHz
Note: h_{FE (1)} classification R: 30~90 O: 50~150
Min Typ. Max Unit
⎯
⎯ −0.1 μA
⎯
⎯ −0.1 μA
−300 ⎯
⎯
V
−300 ⎯
⎯
V
30
⎯
150
20
⎯
⎯
⎯
⎯
−0.5
V
⎯
⎯
−1.2
V
40
60
⎯ MHz
⎯
6
8
pF
1
2007-11-01