2SA1015L-Y Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1015
2SA1015
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
Unit: mm
• High voltage and high current: V_CEO = −50 V (min),
I_C = −150 mA (max)
• Excellent h_FE linearity: h_{FE (2)} = 80 (typ.) at V_CE = −6 V, I_C = −150 mA
: h_FE (I_C = −0.1 mA)/h_FE (I_C = −2 mA) = 0.95 (typ.)
• Low noise: NF = 1dB (typ.) (f = 1 kHz)
• Complementary to 2SC1815.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−50
V
Collector-emitter voltage
V_CEO
−50
V
Emitter-base voltage
V_EBO
−5
V
Collector current
I_C
−150
mA
Base current
I_B
−50
mA
JEDEC
TO-92
Collector power dissipation
Junction temperature
Storage temperature range
P_C
400
mW
T_j
125
°C
T_stg
−55~125
°C
JEITA
TOSHIBA
SC-43
2-5F1B
Weight: 0.21 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Base intrinsic resistance
Noise figure
I_CBO
V_CB = −50 V, I_E = 0
⎯
I_EBO
V_EB = −5 V, I_C = 0
⎯
h_{FE (1)}
V_CE = −6 V, I_C = −2 mA
70
(Note)
h_{FE (2)} V_CE = −6 V, I_C = −150 mA
25
V_{CE (sat)} I_C = −100 mA, I_B = −10 mA
⎯
V_{BE (sat)} I_C = −100 mA, I_B = −10 mA
⎯
f_T
V_CE = −10 V, I_C = −1 mA
80
C_ob
V_CB = −10 V, I_E = 0, f = 1 MHz
⎯
r_bb’
V_CE = −10 V, I_E = 1 mA, f = 30 MHz
⎯
NF
V_CE = −6 V, I_C = −0.1 mA, R_G = 10 kΩ,
f = 1 kHz
⎯
⎯ −0.1 μA
⎯ −0.1 μA
⎯
400
80
⎯
−0.1 −0.3
V
⎯
−1.1
V
⎯
⎯ MHz
4
7
pF
30
⎯
Ω
1.0
10
dB
Note: h_{FE (1)} classification O: 70~140, Y: 120~240, GR: 200~400
1
2007-11-01