2SA1015-YTPE2 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1015
2SA1015
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
Unit: mm
• High voltage and high current: V_CEO = −50 V (min),
I_C = −150 mA (max)
• Excellent h_FE linearity: h_{FE (2)} = 80 (typ.) at V_CE = −6 V, I_C = −150 mA
: h_FE (I_C = −0.1 mA)/h_FE (I_C = −2 mA) = 0.95 (typ.)
• Low noise: NF = 1dB (typ.) (f = 1 kHz)
• Complementary to 2SC1815.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−50
V
Collector-emitter voltage
V_CEO
−50
V
Emitter-base voltage
V_EBO
−5
V
Collector current
I_C
−150
mA
Base current
I_B
−50
mA
JEDEC
TO-92
Collector power dissipation
Junction temperature
Storage temperature range
P_C
400
mW
T_j
125
°C
T_stg
−55~125
°C
JEITA
TOSHIBA
SC-43
2-5F1B
Weight: 0.21 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Base intrinsic resistance
Noise figure
I_CBO
V_CB = −50 V, I_E = 0
⎯
I_EBO
V_EB = −5 V, I_C = 0
⎯
h_{FE (1)}
V_CE = −6 V, I_C = −2 mA
70
(Note)
h_{FE (2)} V_CE = −6 V, I_C = −150 mA
25
V_{CE (sat)} I_C = −100 mA, I_B = −10 mA
⎯
V_{BE (sat)} I_C = −100 mA, I_B = −10 mA
⎯
f_T
V_CE = −10 V, I_C = −1 mA
80
C_ob
V_CB = −10 V, I_E = 0, f = 1 MHz
⎯
r_bb’
V_CE = −10 V, I_E = 1 mA, f = 30 MHz
⎯
NF
V_CE = −6 V, I_C = −0.1 mA, R_G = 10 kΩ,
f = 1 kHz
⎯
⎯ −0.1 μA
⎯ −0.1 μA
⎯
400
80
⎯
−0.1 −0.3
V
⎯
−1.1
V
⎯
⎯ MHz
4
7
pF
30
⎯
Ω
1.0
10
dB
Note: h_{FE (1)} classification O: 70~140, Y: 120~240, GR: 200~400
1
2007-11-01