20JL2C41_06 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – SWITCHING MODE POWER SUPPLY APPLICATIONS

20JL2C41
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
20JL2C41
SWITCHING MODE POWER SUPPLY APPLICATIONS
CONVERTER & CHOPPER APPLICATION
Unit: mm
z Repetitive Peak Reverse Voltage : V_RRM = 600 V
z Average Output Rectified Current : I_O = 20 A
z Ultra Fast Reverse-Recovery Time : t_rr = 50 ns (Max)
z Low Switching Losses and Output Noise
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
V_RRM
600
V
Average Output Rectified Current
I_O
20
A
Peak One Cycle Surge Forward
Current (Sine Wave)
I_FSM
100 (50Hz)
A
110 (60Hz)
Junction Temparature
T_j
−40~150
°C
Storage Temparature Range
Screw Torque
T_stg
−40~150
°C
JEDEC
―
―
0.8
N·m
JEITA
―
TOSHIBA
12−16D1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 4.85g
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Peak Forward Voltage
(Note 1)
Repetitive Peak Reverse Current
(Note 1)
Reverse Recovery time
(Note 1)
Forward Recovery time
(Note 1)
Thermal Resistance
V_FM
I_RRM
t_rr
t_fr
R_{th (j−c)}
I_FM = 10A
V_RRM = 600V
I_F = 2A, di / dt = − 50A / μs
I_F = 1A
Total DC, Junction to Case
Note 1: A value applied to one cell.
TYP. MAX UNIT
―
2.0
V
―
50
μA
―
50
ns
― 150 ns
―
1.5 °C / W
POLARITY
1
2006-11-08