20DL2CZ51A_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – SWITCHING MODE POWER SUPPLY APPLICATIONS

20DL2CZ51A,20FL2CZ51A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
20DL2CZ51A, 20FL2CZ51A
SWITCHING MODE POWER SUPPLY APPLICATIONS
CONVERTER & CHOPPER APPLICATION
Unit: mm
z Repetitive Peak Reverse Voltage : V_RRM = 200 V, 300 V
z Average Output Rectified Current : I_O = 20 A
z Ultra Fast Reverse-Recovery Time : t_rr = 35 ns (Max)
z Low Switching Losses and Output Noise
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak
Reverse Voltage
20DL2CZ51A
20FL2CZ51A
V_RRM
200
300
V
Average Output Rectified Current
I_O
20
A
Peak One Cycle Surge Forward
Current (Sine Wave)
Junction Temperature
Storage Temperature Range
I_FSM
T_j
T_stg
100 (50Hz)
A
110 (60Hz)
−40~150
°C
−40~150
°C
JEDEC
JEITA
TOSHIBA
―
―
2−16E1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 5.9g
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Peak Forward
Voltage
20DL2CZ51A
20FL2CZ51A
Repetitive Peak ReverseCurrent
Reverse Recovery Time
Forward Recovery Time
Thermal Resistance
V_FM
I_RRM
t_rr
t_fr
R_{th (j−c)}
I_FM = 10A
V_RRM = Rated
I_F = 2A, di / dt = − 50A / μs
I_F = 1A
Total DC, Junction to Case
V_FM, I_RRM, t_rr, t_fr : A value applied to one cell.
MIN TYP. MAX UNIT
―
― 0.98
V
―
―
1.3
―
―
50
μA
―
―
35
ns
―
―
100
ns
―
―
2.0 °C / W
POLARITY
1
2006-11-08