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20DL2CZ47A_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – SWITCHING MODE POWER SUPPLY APPLICATION
20DL2CZ47A,20FL2CZ47A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
20DL2CZ47A, 20FL2CZ47A
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER & CHOPPER APPLICATION
Unit: mm
z Repetitive Peak Reverse Voltage : VRRM = 200 V, 300 V
z Average Output Rectified Current : IO = 20 A
z Ultra Fast Reverse-Recovery Time : trr = 35 ns (Max)
z Low Switching Losses and Low Output Noise
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak
Reverse Voltage
20DL2CZ47A
20FL2CZ47A
VRRM
200
300
V
Average Output Rectified Current
(Full Sine Waveform)
IO
20
A
Peak One Cycle Surge Forward
Current (Non−Repetitive)
Junction Temperature
Storage Temperature Range
Screw Torque
IFSM
Tj
Tstg
―
100 (50Hz)
A
110 (60Hz)
−40~150
°C
−40~150
°C
0.6
N·m
JEDEC
JEITA
TOSHIBA
Weight: 2.0g
―
―
12−10C1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Peak Forward
20DL2CZ47A
Voltage
(Note 1) 20FL2CZ47A
Repetitive Peak Reverse Current
(Note 1)
Reverse Recovery Time (Note 1)
Forward Recovery Time (Note 1)
Thermal Resistance
VFM
IFM = 10A
IRRM
trr
tfr
Rth (j−c)
VRRM = Rated
IF = 2.0A, di / dt = −50A / μs
IF = 1.0A
DC Total, Junction to Case
Note 1: A value applied to one cell.
POLARITY
MIN TYP. MAX UNIT
―
― 0.98
V
―
―
1.3
―
―
50
μA
―
―
35
ns
―
―
100
ns
―
―
3.0 °C / W
1
2006-11-08