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1SV323_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TCXO/VCO | |||
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TOSHIBA Diode Silicon Epitaxial Planar Type
1SV323
1SV323
TCXO/VCO
⢠High capacitance ratio: C1 V/C4 V = 4.3 (typ.)
⢠Low series resistance: rs = 0.4 ⦠(typ.)
⢠Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
VR
10
V
Tj
125
°C
Tstg
â55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
VR
IR
C1 V
C4 V
C1 V/C4 V
rs
IR = 1 μA
VR = 10 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
â¯
VR = 4 V, f = 100 MHz
Note: Signal level when capacitance is measured: Vsig = 500 mVrms
Marking
Unit: mm
JEDEC
â
JEITA
â
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Min Typ. Max Unit
10
â¯
â¯
V
â¯
â¯
3
nA
26.5 ⯠29.5 pF
6.0
â¯
7.1
pF
4.0 4.3
â¯
â¯
â¯
0.4 0.8
Ω
1
2007-11-01
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