1SV323 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Useful for small size tuner

TCXO/VCO
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV323
· High capacitance ratio: C1 V/C4 V = 4.3 (typ.)
· Low series resistance: rs = 0.4 Ω (typ.)
· Useful for small size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
V_R
T_j
T_stg
Rating
Unit
10
V
125
°C
-55~125
°C
1SV323
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
V_R
I_R
C_{1 V}
C_{4 V}
C_{1 V}/C_{4 V}
r_s
I_R = 1 mA
V_R = 10 V
V_R = 1 V, f = 1 MHz
V_R = 4 V, f = 1 MHz
¾
V_R = 4 V, f = 100 MHz
Note: Signal level when capacitance is measured: Vsig = 500 mVrms
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Min Typ. Max Unit
10
¾
¾
V
¾
¾
3
nA
26.5 ¾ 29.5 pF
6.0
¾
7.1
pF
4.0
4.3
¾
¾
¾
0.4 0.8
W
1
2003-03-24