1SV322_14 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Planar Type

TOSHIBA Diode Silicon Epitaxial Planar Type
1SV322
1SV322
TCXO/VCO
• High capacitance ratio: C_1V / C_4V = 4.3 (typ.)
• Low series resistance: r_s = 0.4 Ω (typ.)
• Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
V_R
10
V
T_j
125
°C
T_stg
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
V_R
I_R
C_1V
C_4V
C_1V / C_4V
r_s
I_R = 1 μA
V_R = 10 V
V_R = 1 V, f = 1 MHz
V_R = 4 V, f = 1 MHz
⎯
V_R = 4 V, f = 100 MHz
Note: Signal level when capacitance is measured: V_sig = 500 mVrms
Marking
Min Typ. Max Unit
10
⎯
⎯
V
⎯
⎯
3
nA
26.5 ⎯ 29.5 pF
6.0
⎯
7.1
pF
4.0 4.3
⎯
⎯
⎯
0.4 0.8
Ω
Start of commercial production
1999-03
1
2014-03-01