1SV314_14 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Planar Type

TOSHIBA Diode Silicon Epitaxial Planar Type
1SV314
1SV314
VCO for UHF Band Radio
z High Capacitance Ratio : C_0.5V / C_2.5V = 2.5 (Typ.)
z Low Series Resistance : r_s = 0.35 Ω (Typ.)
z Useful for Small Size Tuner
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
Junction Temperature
Storage Temperature Range
V_R
10
V
T_j
125
°C
T_stg
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
JEDEC
—
absolute maximum ratings.
JEITA
—
Please design the appropriate reliability upon reviewing the
TOSHIBA
1−1G1A
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
Weight:0.0014g (typ.)
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC
Reverse Voltage
Reverse Current
Capacitance
Capacitance
Capacitance Ratio
Series Resistance
SYMBOL
TEST CONDITION
V_R
I_R = 1μA
I_R
V_R = 10 V
C_0.5V
V_R = 0.5 V, f = 1 MHz
C_2.5V
V_R = 2.5 V, f = 1 MHz
C_0.5V / C_2.5V
—
r_s
V_R = 1 V, f = 470 MHz
Marking
MIN TYP. MAX UNIT
10
—
—
V
—
—
3
nA
7.3
—
8.4
pF
2.75 —
3.4
pF
2.4 2.5
—
—
— 0.35 0.45 Ω
Start of commercial production
1998-06
1
2014-03-01