1SV312_07 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – VHF~UHF Band RF Attenuator Applications

TOSHIBA Diode Silicon Epitaxial Pin Type
1SV312
1SV312
VHF~UHF Band RF Attenuator Applications
• Two independent diodes mounted onto a 4-pin ultra compact package
and it is suitable for high-density circuit design.
• Low capacitance: C_T = 0.25 pF (typ.)
• Low series resistance: r_s = 3 Ω (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Forward current
Junction temperature
Storage temperature range
V_R
50
V
I_F
50
mA
T_j
125
°C
T_stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage
Reverse current
Forward voltage
Total capacitance
Series resistance
Symbol
V_R
I_R
V_F
C_T
r_s
Test Condition
I_R = 10 μA
V_R = 50 V
I_F = 50 mA
V_R = 50 V, f = 1 MHz
I_F = 10 mA, f = 100 MHz
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-2U1A
Weight: 0.006 g (typ.)
Min Typ. Max Unit
50
⎯
⎯
V
⎯
⎯
0.1
μA
⎯ 0.95
1
V
⎯ 0.25 0.4
pF
⎯
3
⎯
Ω
1
2007-11-01