1SV308_14 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Pin Type

TOSHIBA Diode Silicon Epitaxial Pin Type
1SV308
1SV308
VHF Tuner Band Switch Applications
• Small package.
• Low series resistance: r_s = 1.1 Ω (typ.)
• Small total capacitance: C_T = 0.3 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Forward current
Junction temperature
Storage temperature range
V_R
30
V
I_F
50
mA
T_j
125
°C
T_stg
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage
Reverse current
Forward voltage
Total capacitance
Series resistance 1
Series resistance 2
Symbol
V_R
I_R
V_F
C_T
r_{s (1)}
r_{s (2)}
Test Condition
I_R = 10 μA
V_R = 30 V
I_F = 50 mA
V_R = 1 V, f = 1 MHz
I_F = 10 mA, f = 100 MHz
I_F = 10 mA, f = 1.5 GHz
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Min Typ. Max Unit
30
⎯
⎯
V
⎯
⎯
0.1
μA
⎯ 0.95 1.0
V
⎯
0.3
0.5
pF
⎯
1.0 1.5
Ω
⎯
1.1
⎯
Ω
Start of commercial production
1997-04
1
2014-03-01